s m d ty p e w w w . k e x i n . c o m . c n 1 m os f e t f e a tu r e s v d s ( v ) = 6 0 v i d = 1 2 a ( v g s = 1 0 v ) r d s ( o n ) 6 0 m ( v g s = 1 0 v ) r d s ( o n ) 8 5 m ( v g s = 4 . 5 v ) a b s o l u te m a x i m u m ra ti n g s t a = 2 5 s y m b o l r a t i n g u n i t v d s 6 0 v g s 2 0 t c = 2 5 1 2 t c = 1 0 0 9 t a = 2 5 4 t a = 7 0 3 i d m 3 0 i a s , i a r 1 9 e a s , e a r 1 8 m j t c = 2 5 2 0 t c = 1 0 0 1 0 t a = 2 5 2 . 1 t a = 7 0 1 . 3 t 1 0 s 3 0 s t e a d y - s t a t e 6 0 r t h jc 7 . 5 t j 1 7 5 t st g - 5 5 t o 1 7 5 w t h e r m a l r e s i s t a n c e . j u n c t i o n - t o - a m b i e n t r t h ja j u n c t i o n t e m p e r a t u r e s t o r a g e t e m p e r a t u r e r a n g e / w t h e r m a l r e s i s t a n c e . j u n c t i o n - t o - c a s e v p u l s e d d r a i n c u r r e n t p a r a m e t e r d r a i n - s o u r c e v o l t a g e g a t e - s o u r c e v o l t a g e a c o n t i n u o u s d r a i n c u r r e n t i d p o w e r d i s s i p a t i o n p d a v a l a n c h e c u r r e n t a v a l a n c h e e n e r g y l = 0 . 1 m h g d s 2 . 3 0 . 6 0 + 0 . 1 - 0 . 1 6 . 5 0 + 0 . 1 5 - 0 . 1 5 1 . 5 0 + 0 . 1 5 - 0 . 1 5 0 . 8 0 + 0 . 1 - 0 . 1 4 . 6 0 + 0 . 1 5 - 0 . 1 5 0 . 5 0 + 0 . 1 5 - 0 . 1 5 9 . 7 0 + 0 . 2 - 0 . 2 5 . 3 0 + 0 . 2 - 0 . 2 2 . 3 0 + 0 . 1 - 0 . 1 0 . 5 0 + 0 . 8 - 0 . 7 5 . 5 5 + 0 . 1 5 - 0 . 1 5 2 . 6 5 + 0 . 2 5 - 0 . 1 1 . 5 0 + 0 . 2 8 - 0 . 1 0 . 1 2 7 m a x 3 . 8 0 to-252 u n i t : m m n- ch an n el m osf et a o d444 ( k o d 4 4 4 )
s m d ty p e w w w . k exi n . co m . c n 2 m osf e t e l e c tr i c a l ch a r a c te r i s ti c s t a = 2 5 p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n t y p m a x u n i t d r a i n - s o u r c e b r e a k d o w n v o l t a g e v d s s i d = 2 5 0 a , v g s = 0 v 6 0 v v d s = 4 8 v , v g s = 0 v 1 v d s = 4 8 v , v g s = 0 v , t j = 5 5 5 g a t e - b o d y l e a k a g e c u r r e n t i g s s v d s = 0 v , v g s = 2 0 v 1 0 0 n a g a t e t h r e s h o l d v o l t a g e v g s ( t h ) v d s = v g s , i d = 2 5 0 a 1 3 v v g s = 1 0 v , i d = 1 2 a 6 0 v g s = 1 0 v , i d = 1 2 a t j = 1 2 5 1 0 0 v g s = 4 . 5 v , i d = 6 a 8 5 o n s t a t e d r a i n c u r r e n t i d ( o n ) v g s = 1 0 v , v d s = 5 v 3 0 a f o r w a r d t r a n s c o n d u c t a n c e g f s v d s = 5 v , i d = 2 0 a 1 4 s i n p u t c a p a c i t a n c e c i ss 3 6 0 4 5 0 5 4 0 o u t p u t c a p a c i t a n c e c o ss 4 0 6 1 8 0 r e v e r s e t r a n s f e r c a p a c i t a n c e c r ss 1 6 2 7 4 0 g a t e r e s i s t a n c e r g v g s = 0 v , v d s = 0 v , f = 1 m h z 0 . 6 2 t o t a l g a t e c h a r g e ( 1 0 v ) 7 . 5 1 0 t o t a l g a t e c h a r g e ( 4 . 5 v ) 3 . 8 5 g a t e s o u r c e c h a r g e q g s 1 . 2 g a t e d r a i n c h a r g e q g d 1 . 9 t u r n - o n d e l a y t i m e t d ( o n ) 4 . 2 t u r n - o n r i s e t i m e t r 3 . 4 t u r n - o f f d e l a y t i m e t d ( o f f ) 1 6 t u r n - o f f f a l l t i m e t f 2 b o d y d i o d e r e v e r s e r e c o v e r y t i m e t r r 2 7 3 5 b o d y d i o d e r e v e r s e r e c o v e r y c h a r g e q r r 3 0 n c m a x i m u m b o d y - d i o d e c o n t i n u o u s c u r r e n t i s 1 2 a d i o d e f o r w a r d v o l t a g e v s d i s = 1 a , v g s = 0 v 1 v q g v g s = 1 0 v , v d s = 3 0 v , i d = 1 2 a v g s = 0 v , v d s = 3 0 v , f = 1 m h z p f n c i f = 1 2 a , d i / d t = 1 0 0 a / s n s z e r o g a t e v o l t a g e d r a i n c u r r e n t i d s s u a m v g s = 1 0 v , v d s = 3 0 v , r l = 2 . 5 , r g = 3 r d s ( o n ) s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e n- ch an n el m osf et a o d444 ( k o d 4 4 4 )
s m d ty p e w w w . k e x i n . c o m . c n 3 m o s f e t t y p i c a l ch a r a c te r i s i ti c s 10 0 4 8 12 16 20 2 3 4 5 6 v gs (volts) figure 2: transfer characteristics (note e) i d ( a ) 30 40 50 60 70 80 90 100 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r d s ( o n ) ( m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s ( a ) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 25 50 75 100 125 150 175 200 temperature (c) figure 4: on-resistance vs. junction temperature (note e) n o r m a l i z e d o n - r esi s t a n c e v gs =4.5v i d =6a v gs =10v i d =12a 30 50 70 90 110 130 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r d s ( o n ) ( m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =12a 25c 125c 0 5 10 15 20 25 30 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics (note e) i d ( a ) v gs =3.5v 4v 6v 7v 10v 4.5v 5v n- ch an n el m osf et a o d444 ( k o d 4 4 4 )
s m d ty p e w w w . k e x i n . c o m . c n 4 m o s f e t . t y p i c a l ch a r a c te r i s i ti c s 0 2 4 6 8 10 0 2 4 6 8 q g (nc) figure 7: gate-charge characteristics v g s ( v o l t s ) 0 100 200 300 400 500 600 700 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics cap aci t a n ce ( p f ) c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) p o w e r ( w ) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z j c n o r m al i z e d t r a n si e n t t h er m al res i s t a n c e c oss c rss v ds =30v i d =12a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t c =25c 10 s 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 v ds (volts) i d ( a m p s ) figure 9: maximum forward biased safe operating area (note f) 10 s 10ms 1ms dc r ds(on) limited t j(max) =175c t c =25c 1 00 s r jc =7.5c/w n- ch an n el m osf et a o d444 ( k o d 4 4 4 )
s m d ty p e w w w . k e x i n . c o m . c n 5 m o s f e t t y p i c a l ch a r a c te r i s i ti c s 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) z j a n o r m al i z e d t r a n si e n t t h er m al resi s t a n c e single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 5 10 15 20 25 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note f) p o w e r d i ssi p a t i o n ( w ) 0 2 4 6 8 10 12 14 16 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note f) c u rr e n t r a t i n g i d ( a ) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) p o w e r ( w ) t a =25c r ja =60c/w 1 10 100 0 0 1 0 1 1 time in avalanche, t a ( s) figure 12: single pulse avalanche capability (note c) i a r ( a ) p eak aval a n c h e c u rre n t t a =25c t a =150c t a =100c t a =125c n- ch an n el m osf et a o d444 ( k o d 4 4 4 )
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